ORGANIC GATE TFT-TYPE STRESS SENSORS AND METHOD OF MAKING AND USING THE SAME

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United States of America

APP PUB NO 20240389463A1
SERIAL NO

18788082

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Abstract

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A thin-film transistor includes a flexible substrate, an amorphous semiconductor channel layer on the flexible substrate, an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer, a gate electrode adjacent to the organic material piezoelectric stress gate layer, and a source electrode and drain electrode coupled to the organic material piezoelectric stress gate layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSIN-CHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Hai-Ching Hsinchu City, TW 224 979
HUANG, Yen-Chieh Hsinchu, TW 78 162

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