SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME
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United States of America
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Issued Date -
Nov 21, 2024
app pub date -
Jul 26, 2024
filing date -
Jul 26, 2024
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Abstract
A semiconductor device, an integrated circuit, and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a thin-film transistor (TFT) over the substrate, and a magnetoresistive random-access memory (MRAM) cell electrically coupled to the TFT. The TFT includes a gate electrode; an active layer disposed above the gate electrode; source/drain electrodes disposed above the gate electrode and separated by the active layer; and at least two dielectric layers disposed between the gate electrode and the source/drain electrodes.
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