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Abstract

High-bandwidth lasers having minimized parasitic responses are described herein. In some embodiments, the present invention may be directed to a laser having a minimized parasitic response that is achieved by decreasing the active resistance of the laser's active region and decreasing the active capacitance of the laser. For example, the laser may include an active region having an active resistance as well as mirror regions, where the mirror regions have average dopant densities that decrease the active resistance of the active region and decrease the active capacitance of the laser. By decreasing the active resistance and the active capacitance, the −3 dB frequency of the parasitic response is increased. By increasing the −3 dB frequency of the parasitic response, a total response of the laser (e.g., a combination of an intrinsic response and the parasitic response) has a higher −3 dB frequency, thereby allowing the laser to operate at higher bandwidths.

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First Claim