SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

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United States of America

APP PUB NO 20240387510A1
SERIAL NO

18777737

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Abstract

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In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.

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Patent Owner(s)

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SEMICONDUCTOR COMPONENTS INDUSTRIES LLC5005 EAST MCDOWELL ROAD MD A700 PHOENIX AS 85008

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Yupeng San Jose, US 47 112
GRISWOLD, Mark Gilbert, US 93 1106
JOHNSON, Derrick Phoenix, US 62 1581
WALL, Ralph N Pocatello, US 20 103

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