DELAMINATION SENSOR

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240387411A1
SERIAL NO

18789106

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Abstract

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Semiconductor structures and methods of testing the same are provided. A semiconductor structure according to the present disclosure includes a substrate, a semiconductor device over the substrate, wherein the semiconductor device includes an interconnect structure, and the interconnect structure includes a plurality of metallization layers disposed in a dielectric layer; and a delamination sensor. The delamination sensor includes a connecting structure and a plurality of contact vias in at least one of the plurality of metallization layers. The connecting structure bonds the semiconductor device to the substrate and does not functionally couple the semiconductor device to the substrate. The plurality of contact vias fall within a first region of a vertical projection area of the connecting structure but do not overlap a second region of the vertical projection area.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kuo-Wen Hsinchu City, TW 27 58
Lu, Hsiang-Tai Hsinchu County, TW 44 329
Tai, Chih-Hsuan Hsinchu, TW 58 189
Wu, Ming-Chung Hsinchu, TW 8 13

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