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United States of America

APP PUB NO 20240387274A1
SERIAL NO

18786886

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Abstract

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A method according to the present disclosure includes providing a workpiece including a first fin-shaped structure and a second fin-shaped structure over a substrate, depositing a nitride liner over the substrate and sidewalls of the first fin-shaped structure and the second fin-shaped structure, forming an isolation feature over the nitride liner and between the first fin-shaped structure and the second fin-shaped structure, epitaxially growing a cap layer on exposed surfaces of the first fin-shaped structure and the second fin-shaped structure and above the nitride liner, crystalizing the cap layer, and forming a first source/drain feature over a first source/drain region of the first fin-shaped structure and a second source/drain feature over a second source/drain region of the second fin-shaped structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSIN-CHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Allen Hsinchu County, TW 13 87
Ding, Cheng-Ting Taipei City, TW 3 1
Hsiao, Po-Kai Changhua County, TW 10 10
Huang, Tsai-Yu Hsinchu, TW 50 142
Lee, Chien-Chih New Taipei City, TW 23 60
Lee, Tsung-Hung Hsinchu City, TW 18 153
Lin, Chien-Chih Taichung City, TW 81 298
Lin, Shih-Hao Hsinchu, TW 167 179
Yang, Szu-Chi Hsinchu City, TW 18 15
Yeh, Chih Chieh Taipei City, TW 190 6131

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