UNSELECT WORD LINE SWITCH BIAS SCHEME FOR NON-VOLATILE MEMORY APPARATUS
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United States of America
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N/A
Issued Date -
Nov 21, 2024
app pub date -
Jul 31, 2023
filing date -
Jul 31, 2023
priority date (Note) -
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Abstract
A memory apparatus and method of operation are provided. The apparatus includes word line switches coupled to word lines connected to memory cells. The word line switches are each configured to retain a switch threshold voltage and selectively connect the word lines to a common driver for supplying voltages thereto during a memory operation. A control means is configured to apply predetermined select block switch voltages to a first set of the word line switches connected to the word lines of a selected block. The predetermined select block switch voltages are based on the memory operation performed. The control means apply a predetermined unselect block switch voltage to a second set of the word line switches connected to the word lines of an unselected block. The predetermined unselect block switch voltage is selected to lower the switch threshold voltage of the word line switches of the second set.
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