DRY PHOTORESIST OR HARDMASK FOR EUV LITHOGRAPHY
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United States of America
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Issued Date -
Nov 21, 2024
app pub date -
May 18, 2023
filing date -
May 18, 2023
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Abstract
An organometallic compound, composition, and dry photoresist or hardmask for extreme ultraviolet (EUV) lithography are disclosed. The organometallic compound includes at least one bismuth element selected from Bi(III) and Bi(V). The organometallic compound also includes at least one C1 to C6 alkyl ligand and at least one terminal or bridging ligand A (O, S, or N—R, where the R group in N—R is H or a C1 to C6 alkyl) bonded to the bismuth element. Methods for preparing the dry photoresist or hardmask composition and for using the composition to form patterned material features on a substrate are disclosed as well.
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