DOPED SEMICONDUCTOR STRUCTURE FOR NIR SENSORS
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United States of America
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Issued Date -
Nov 14, 2024
app pub date -
Jul 22, 2024
filing date -
Jul 22, 2024
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Abstract
The present disclosure relates an integrated chip structure. The integrated chip structure includes a base substrate having one or more interior surfaces defining a recess within an upper surface of the base substrate. An epitaxial material is disposed within the recess. A first doped photodiode region is disposed within the epitaxial material and has a first doping type. A second doped photodiode region is disposed within the epitaxial material and has a second doping type. The second doped photodiode region laterally surrounds the first doped photodiode region. A doped epitaxial layer is disposed horizontally and vertically between the base substrate and the epitaxial material. The doped epitaxial layer has the second doping type.
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