IMAGE SENSOR WITH DIFFUSION BARRIER STRUCTURE
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United States of America
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Issued Date -
Nov 14, 2024
app pub date -
Jul 22, 2024
filing date -
Jul 22, 2024
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Abstract
The present disclosure relates to an integrated chip. The integrated chip includes a sensor semiconductor layer. The sensor semiconductor layer is doped with a first dopant. A photodetector is along a frontside of the sensor semiconductor layer. A backside semiconductor layer is along a backside of the sensor semiconductor layer, opposite the frontside. The backside semiconductor layer is doped with a second dopant. A diffusion barrier structure is between the sensor semiconductor layer and the backside semiconductor layer. The diffusion barrier structure includes a third dopant different from the first dopant and the second dopant.
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