CONDUCTIVE CONTACT HAVING BARRIER LAYERS WITH DIFFERENT DEPTHS
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United States of America
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Issued Date -
Nov 14, 2024
app pub date -
Jul 24, 2024
filing date -
Jul 24, 2024
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Abstract
A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.
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