Bond Films for Reduced Thermal Resistance and Methods Forming the Same
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United States of America
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Nov 14, 2024
app pub date -
May 9, 2023
filing date -
May 9, 2023
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Abstract
A method includes forming feature for a first package component, and the forming the feature includes a planarization process to level a top surface of the feature. A silicon-containing dielectric layer is deposited over and contacting the feature, and as a surface feature of the first package component. A second package component is bonded to the silicon-containing dielectric layer through fusion bonding. The silicon-containing dielectric layer has a same thickness in both steps of the depositing and the fusion bonding.
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