SELF-ALIGNED LINES AND METHODS FOR FABRICATING THE SAME
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United States of America
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Issued Date -
Nov 14, 2024
app pub date -
Jul 23, 2024
filing date -
Jul 23, 2024
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Abstract
A disclosed method of fabricating a semiconductor structure includes forming a first conductive pattern over a substrate, with the first conductive pattern including a first conductive line and a second conductive line. A barrier layer may be conformally formed over the first conductive line and the second conductive line of the first conductive pattern. An insulating layer may be formed over the barrier layer. The insulating layer may be patterned to form openings between conductive lines of the first conductive pattern a second conductive pattern may be formed in the openings. The second conductive pattern may include a third conductive line is physically separated from the first conductive pattern by the barrier layer. The presence of the barrier layer reduces the risk of a short circuit forming between the first and second conductive patterns. In this sense, the second conductive pattern may be self-aligned relative to the first conductive pattern.
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