Importance

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Abstract

A semiconductor device includes a substrate including an active pattern that is defined by a trench, a device isolation layer in the trench, a first source/drain pattern and a second source/drain pattern on the active pattern, a partition wall between the first and second source/drain patterns, a dam structure and a gate cutting pattern on the device isolation layer, and a gate spacer on a side surface of the gate cutting pattern. The first source/drain pattern is in a recess between the partition wall and the dam structure, and a lower portion of the gate spacer is interposed between the dam structure and the gate cutting pattern. A first thickness of the lower portion of the gate spacer is different from a second thickness of an upper portion of the gate spacer.

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First Claim