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Abstract

Implantation mask formation techniques described herein include increasing an initial aspect ratio of a pattern in an implantation mask by non-lithography techniques, which may include forming a resist hardening layer on the implantation mask. The pattern may be formed by photolithography techniques to the initial aspect ratio that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. Then, the resist hardening layer is formed on the implantation mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the openings or trenches and the width of the openings or trenches of the pattern. In this way, the pattern in the implantation mask may be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of pattern collapse during formation of the pattern.

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First Claim