INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING
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United States of America
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Nov 14, 2024
app pub date -
Jul 24, 2024
filing date -
Jul 24, 2024
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Abstract
A method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. In some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. In some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.
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