ION IMPLANTATION SYSTEM AND RELATED METHODS
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United States of America
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Issued Date -
Nov 14, 2024
app pub date -
May 7, 2024
filing date -
May 7, 2024
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Abstract
An ion implantation system and related methods are provided herein. An ion implantation system comprises a gas supply assembly comprising at least one gas supply vessel in fluid communication with an arc chamber. The gas supply assembly is configured to supply a gas component comprising at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. When the gas component is supplied from the at least one gas supply vessel to the arc chamber for implantation into a substrate, a beam current of Ge ions generated from the gas component is greater than a beam current of Ge ions generated from a control gas component.
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