SEMICONDUCTOR MEMORY DEVICES WITH WRAPPED WORD LINES
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United States of America
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Issued Date -
Nov 14, 2024
app pub date -
Jul 25, 2024
filing date -
Jul 25, 2024
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Abstract
A method for manufacturing a semiconductor device includes forming a first memory cell, which includes forming a first conductor structure extending along a lateral direction; forming a first memory film comprising a first portion wrapping around a first portion of the first conductor structure; forming a first semiconductor film wrapping around the first portion of the first memory film; forming a second conductor structure that extends along a vertical direction; coupling the second conductor structure to a first end portion of the first semiconductor film along the lateral direction; forming a third conductor structure extends along the vertical direction; and coupling the third conductor structure to a second end portion of the first semiconductor film along the lateral direction. The first conductor structure has a void.
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