MULTIPLE-MASK MULTIPLE-EXPOSURE LITHOGRAPHY AND MASKS

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United States of America

APP PUB NO 20240377755A1
SERIAL NO

18780081

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Abstract

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Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Roger Hsinchu, TW 100 3077
Hsu, Chih-Tung Hsinchu, TW 7 30
Hu, Chih-Chia Hsinchu, TW 52 329
Wang, Kevin Hsinchu, TW 78 842
Yu, Peter Hsinchu, TW 41 648

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