SEMICONDUCTOR DEVICE COMPRISING A PHOTODETECTOR WITH REDUCED DARK CURRENT
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United States of America
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Nov 7, 2024
app pub date -
Jul 17, 2024
filing date -
Jul 17, 2024
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Abstract
Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a first doped region disposed in a semiconductor substrate and a second doped region disposed in the semiconductor substrate. A photodetector is disposed between the first doped region and the second doped region. The photodetector has a lower surface that arcs between opposing sidewalls of the photodetector in a cross-sectional view. The first doped region and the second doped region contact the lower surface of the photodetector.
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