SEMICONDUCTOR STRUCTURE WITH COMPOSITE OXIDE LAYER
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United States of America
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Issued Date -
Nov 7, 2024
app pub date -
Jul 18, 2024
filing date -
Jul 18, 2024
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Abstract
1. A semiconductor structure includes a first fin; an isolation structure adjacent the first fin; a dielectric layer adjacent the isolation structure; a first oxide layer adjacent the first fin, the isolation structure, and the dielectric layer, and a second oxide layer adjacent the first oxide layer. The first oxide layer and the second oxide layer define a composite oxide layer. A horizontal portion of the composite oxide layer is thicker than a vertical portion of the composite oxide layer.
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