VERTICAL POWER SEMICONDUCTOR DEVICE HAVING AN INTERLAYER DIELECTRIC STRUCTURE
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United States of America
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Nov 7, 2024
app pub date -
Apr 19, 2024
filing date -
Apr 19, 2024
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Abstract
A vertical power semiconductor device is proposed. The vertical power semiconductor device includes a silicon carbide (SIC) semiconductor body including a trench structure. The trench structure extends into the SiC semiconductor body at a first surface of the SiC semiconductor body. The trench structure includes a gate electrode and a gate dielectric arranged between the gate electrode and the SiC semiconductor body. An interlayer dielectric structure is arranged on the trench structure. The interlayer dielectric structure includes at least one of an aluminum nitride layer, a silicon nitride layer, an aluminum oxide layer, or a boron nitride layer. The vertical power semiconductor device further includes a source or emitter electrode on the interlayer dielectric structure.
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