DIFFERENT SCALING RATIO IN FEOL / MOL/ BEOL

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240371765A1
SERIAL NO

18777711

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Abstract

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The present disclosure, in some embodiments, relates to a method for generating a scaled integrated chip design. The method includes forming an original integrated chip (IC) design including a graphical representation of a layout corresponding to an integrated chip to be formed on a semiconductor substrate. The original IC design includes a gate contact layer having a plurality of gate contacts and a first interconnect layer having a first plurality of interconnects. The gate contact layer is scaled at a first scaling ratio, and the first interconnect layer is scaled at a second scaling ratio that is different than the first scaling ratio.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chun-Yi Beipu Township, TW 105 506
Lee, Liang-Yao Taoyuan City, TW 19 73
Tsai, Tsung-Chieh Chu-Bei City, TW 43 165
Wu, Juing-Yi Hsinchu City, TW 25 97

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