METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR LINER
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United States of America
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Issued Date -
Nov 7, 2024
app pub date -
Sep 13, 2023
filing date -
Sep 13, 2023
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Abstract
A method for forming a semiconductor device may include forming, on a substrate, a trench which delimits a preliminary active region. A buffer layer may be formed on the preliminary active region using a first heat treatment process that is performed at 520° C. to 580° C. A sacrificial layer may be formed by replacing the buffer layer. An active region may be exposed by removing the sacrificial layer. A semiconductor liner may be formed on the active region.
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