Importance

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Abstract

The present invention relates to a method of manufacturing a compound semiconductor bonded substrate comprising the steps of:

(1) epitaxially growing a compound semiconductor functional layer on a starting substrate;(2) temporarily bonding a support substrate to the epitaxially grown surface to form a first compound semiconductor bonded substrate;(3) removing the starting substrate from the first compound semiconductor bonded substrate to form a second compound semiconductor bonded substrate;(4) finally bonding a surface of the second compound semiconductor bonded substrate from which the starting substrate has been removed to a permanent substrate to form a third compound semiconductor bonded substrate;(5) removing the support substrate from the third compound semiconductor bonded substrate to form a fourth compound semiconductor bonded substrate, wherein the temporary bonding is performed via a thermosetting resin, the thermosetting resin being maintained in a softened state without being cured, andthe final bonding is performed via a silicon oxide film or a silicon nitride film.

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First Claim