SURFACE PROCESSING METHOD OF SEMICONDUCTOR WAFER
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United States of America
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Nov 7, 2024
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Jul 12, 2024
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Jul 12, 2024
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A surface processing method of a semiconductor wafer includes the following processes, procedures or steps: a pulsed current of which the current density is larger than or equal to 20 mA/cm2 is caused to flow through the semiconductor wafer as an anode in an electrolyte solution, thereby anodizing an object surface of the semiconductor wafer; and in a state where a surface processing pad having a grinding stone layer is disposed such that the grinding stone layer faces the object surface, an oxide generated by the anodization is selectively removed by the grinding stone layer.
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