MEMORY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATING A MEMORY DEVICE
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United States of America
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Issued Date -
Nov 7, 2024
app pub date -
Jul 13, 2024
filing date -
Jul 13, 2024
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Abstract
A memory structure includes a first memory array having bit lines; a second memory array having bit lines; a first sense amplifier connected to a first bit line of the first memory array and a first bit line of the second memory array; and a second sense amplifier connected to a second bit line of the first memory array and a second bit line of the second memory array. The second bit line of the first memory array is adjacent to the first bit line of the first memory array, and the second bit line of the second memory array is adjacent to the first bit line of the second memory array.
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