Magnetic Flux Guiding Device With Spin Torque Oscillator (STO) Film Having Negative Spin Polarization Layers In Assisted Writing Application

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United States of America

APP PUB NO 20240371402A1
SERIAL NO

18769275

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Abstract

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A STRAMR structure is disclosed. The STRAMR structure can include a spin torque oscillator (STO) device in a WG provided between the mail pole (MP) trailing side and a trailing shield. The STO device, includes: a flux guiding layer that has a negative spin polarization (nFGL) with a magnetization pointing substantially parallel to the WG field without the current bias and formed between a first spin polarization preserving layer (ppL1) and a second spin polarization preserving layer (ppL2); a positive spin polarization (pSP) layer that adjoins the TS bottom surface; a non-spin polarization preserving layer (pxL) contacting the MP trailing side; a first negative spin injection layer (nSIL1) between the ppL2 and a third spin polarization preserving layer (ppL3); and a second negative spin injection layer (nSIL2) between the ppL3 and the pxL, wherein the nFGL, nSIL1, and nSIL2 have a spin polarization that is negative.

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Patent Owner(s)

Patent OwnerAddress
HEADWAY TECH INCNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Wenyu San Jose, US 65 816
Kawasaki, Shohei Sunnyvale, US 20 156
Roppongi, Tetsuya San Jose, US 81 1304

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