METHOD OF MANUFACTURING EUV PHOTO MASKS
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United States of America
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Issued Date -
Nov 7, 2024
app pub date -
Jul 12, 2024
filing date -
Jul 12, 2024
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Abstract
In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.
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