MATCHING METHOD FOR SEMICONDUCTOR TOPOGRAPHY MEASUREMENT AND PROCESSING DEVICE USING THE SAME
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United States of America
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Nov 7, 2024
app pub date -
Jun 1, 2023
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Jun 1, 2023
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Abstract
A matching method for semiconductor topography measurement and a processing device using the same are provided. The matching method includes the following steps. An original surface topography curve is obtained. The original surface topography curve is obtained by measuring along a measurement straight line path of a semiconductor device. The original surface topography curve is converted into a surface topography variation curve. A circuit layout is obtained. A plurality of conductor density variation curves are obtained along a plurality of layout straight-line paths. According to a plurality of weighted values of a plurality of topography variation observation intervals of the surface topography variation curve, a weighted correlation between the surface topography variation curve and each of the conductor density variation curves is analyzed. According to the weighted correlations, the measurement straight line path matching the original surface topography curve is obtained from the layout straight-line paths.
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