RESIN COMPOSITION FOR FORMING ETCHING MASK PATTERN, AND METHOD FOR MANUFACTURING ETCHING MASK PATTERN
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United States of America
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Nov 7, 2024
app pub date -
Apr 25, 2024
filing date -
Apr 25, 2024
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Abstract
A resin composition for forming an etching mask pattern containing a block copolymer having a first block and a second block, and a homopolymer having a number-average molecular weight of less than 3,000. The first block is a polymer of a constitutional unit represented by Formula (b1) and the second block is a random copolymer of a constitutional unit represented by Formula (b2m) and a constitutional unit represented by Formula (b2g). The proportion of the volume of the first block is 20% to 80% by volume. The homopolymer includes a polymer of the constitutional unit represented by Formula (b1). In the formulas illustrated below, R1 is an alkyl group, Rb1 is a hydrogen atom or a methyl group, n is an integer of 0 to 5, R2 is an alkyl group, R3 is an alkylene group, Rb2 is a hydrogen atom or the like, and x is more than 0 and less than 1
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