CONDUCTIVE BOND STRUCTURE TO INCREASE MEMBRANE SENSITIVTY IN MEMS DEVICE

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United States of America

APP PUB NO 20240367965A1
SERIAL NO

18777885

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Abstract

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Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure overlying a first substrate. A second substrate overlies the dielectric structure and comprises a movable element. A first bond structure is arranged between the dielectric structure and the second substrate. A second bond structure is arranged between the dielectric structure and the second substrate. At least a portion of the movable element is spaced laterally between sidewalls of the second bond structure. The first bond structure comprises a first material and the second bond structure comprises a second material different form the first material. A thickness of the first bond structure is less than a thickness of the second bond structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsieh, Yuan-Chih Hsinchu City, TW 102 1115
Huang, Xin-Hua Xihu Township, TW 73 1348
Hung, Chia-Ming Taipei City, TW 44 376
Lin, Hung-Hua Taipei City, TW 51 387

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