COMPUTE-IN-MEMORY DEVICE AND METHOD

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240365556A1
SERIAL NO

18769532

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Abstract

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In some embodiments, an integrated circuit (IC) device includes an active semiconductor layer, a circuitry formed within the active semiconductor layer, a region including conductive layers formed in a back-end-of-line (BEOL) layer above the active semiconductor layer, and a memory module formed in the BEOL layer. The memory device includes a three-dimensional array of memory cells, each adapted to store a weight value, and adapted to generate at each memory cell a signal indicative of a product between the stored weight value and an input signal applied to the memory cell. The memory module is further adapted to transmit the product signals from the memory cell simultaneously in the direction of the active semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Wen-Chang Hsinchu, TW 34 95
Huang, Chia-En Hsinchu, TW 320 426
Lee, Chieh Hsinchu, TW 51 61
Liu, Yi-Ching Hsinchu, TW 94 407
Wang, Yih Hsinchu, TW 285 868

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