RECTIFIER CIRCUIT AND POWER SUPPLY USING SAME

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240364231A1
SERIAL NO

18682514

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A first MOSFET, a second MOSFET, a first control circuit, and a second control circuit are provided; the second MOSFET is in a non-rectification period when the first MOSFET is in a rectification period; the first MOSFET is in a non-rectification period when the second MOSFET is in a rectification period; the first control circuit outputs a voltage generated on the basis of a first input voltage as a first output voltage between the gate and the source of the first MOSFET in at least a portion of a period in which a voltage between the drain and the source of the second MOSFET is inputted as the first input voltage and a negative voltage is applied between the drain and the source of the first MOSFET; the second control circuit outputs a voltage generated on the basis of a second input voltage as a second output voltage between the gate and the source of the second MOSFET in at least a portion of a period in which a voltage between the drain and the source of the first MOSFET is inputted as the second input voltage and a negative voltage is applied between the drain and the source of the second MOSFET.

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Patent Owner(s)

Patent OwnerAddress
MINEBEA POWER SEMICONDUCTOR DEVICE INC2-2 OMIKA-CHO 5-CHOME HITACHI-SHI IBARAKI 3191221 ?3191221

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HIGUCHI, Takahiro Hitachi-shi, JP 18 90
MIWA, Yoshihiro Tokyo, JP 20 25
SAKANO, Junichi Tokyo, JP 48 349
SHOJI, Hiroyuki Tokyo, JP 60 958
UTSUMI, Tomoyuki Hitachi-shi, JP 4 36

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