Photodetector with Improved Performance

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240363775A1
SERIAL NO

18646270

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Abstract

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A photodetector may include a substrate having a larger lattice constant than an absorber layer. A reverse graded set of buffer layers may provide lattice matching between the substrate and the absorber layer. The substrate may comprise indium arsenide (InAs). The absorber layer may comprise one of indium gallium arsenide (InxGa1-xAs), indium arsenide phosphide (InAsxP1-x), and indium aluminum arsenide (InxAl1-xAs).

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Patent Owner(s)

Patent OwnerAddress
APPLE INCONE APPLE PARK WAY CUPERTINO CA 95014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mahgerefteh, Daniel Campbell, US 104 1919
Morea, Matthew T Cupertino, US 7 3

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