Importance

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Abstract

An integrated circuit includes: a source region, split gate structures on opposing sides of the source region, the split gate structures including a floating gate electrode layer and a control gate electrode layer, an erase gate structure between the split gate structures on the source region and including an erase gate electrode layer, a pair of selection gate structures on outer sidewalls of the split gate structures, and a pair of gate spacers. Each gate spacer is disposed between one of the split gate structures and one of the selection gate structures, includes a first gate spacer and a second gate spacer disposed on the first gate spacer, and is further disposed on an outer side wall of the one of the split gate structures. A lowermost end of the second gate spacer is at a lower level than an upper surface of the floating gate electrode layer.

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First Claim