MEMORY ARRAY CIRCUIT AND METHOD OF MANUFACTURING SAME

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United States of America

APP PUB NO 20240363616A1
SERIAL NO

18769004

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Abstract

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A memory array includes a first memory cell configured to store data, a second memory cell configured to store data and a bit line extending along the first direction, and being over the first memory cell and the second memory cell. The first memory cell and the second memory cell are arranged along a first direction in a first column of memory cells. The bit line includes a first conductor extending in the first direction and being in a first conductive layer, and a second conductor extending in the first direction and being in a second conductive layer different from the first conductive layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Yen-Huei Hsinchu, TW 294 1754
FUJIWARA, Hidehiro Hsinchu, TW 177 563
LIAO, Hung-Jen Hsinchu, TW 245 1267
LIN, Chih-Yu Hsinchu, TW 111 558
PAN, Hsien-Yu Hsinchu, TW 35 96
SINGH, Sahil Preet Hsinchu, TW 41 76

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