INTEGRATED CIRCUIT STRUCTURE OF CAPACITIVE DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240363523A1
SERIAL NO

18769412

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An integrated circuit structure includes: a first capacitor structure, disposed over a semiconductor substrate and including a plurality of capacitors; a second capacitor structure, adjacent to the first capacitor structure; a first conductive plate, disposed over a first end of the second capacitor structure, the first conductive plate having a lateral side facing a lateral side of each of the first and second capacitor structures; and a second conductive plate, disposed over and across at least one of the first capacitor structure and the second capacitor structure.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, TAI-YI HSINCHU, TW 18 24
PENG, YUNG-CHOW HSINCHU, TW 205 737
YANG, CHUNG-CHIEH HSINCHU COUNTY, TW 66 264

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation