SEMICONDUCTOR DEVICE WITH FIN STRUCTURES
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United States of America
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Issued Date -
Oct 31, 2024
app pub date -
Jul 9, 2024
filing date -
Jul 9, 2024
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first fin structure, a second fin structure, and a third fin structure over the substrate. Tops of the second fin structure and the third fin structure are at different height levels. The semiconductor device structure also includes a first epitaxial structure extending across sidewalls of the first fin structure and the second fin structure and a second epitaxial structure on the third fin structure. The first epitaxial structure is closer to the substrate than the second epitaxial structure.
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