SILICON CHANNEL FOR BONDED 3D NAND DEVICES
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Oct 31, 2024
app pub date -
Feb 14, 2024
filing date -
Feb 14, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A method for manufacturing a memory device includes depositing a seed layer in a memory hole extending through a memory stack. The seed layer includes particles, such as silicon particles. The seed layer is etched to produce etched particles. The etched particles act as nuclei for the growth of a crystalline channel material in the memory hole.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully