METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS
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United States of America
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Oct 31, 2024
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Apr 26, 2023
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Apr 26, 2023
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Abstract
Semiconductor processing methods are described for forming low-κ dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.
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