NONVOLATILE MEMORY DEVICES, STORAGE DEVICES INCLUDING THE SAME, AND METHODS OF OPERATING THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20240363172A1
SERIAL NO

18509021

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Abstract

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A nonvolatile memory device includes a plurality of tri-state latches, a sensing node circuit configured to electrically couple a sensing node therein to a bitline of the memory device, a transfer node circuit configured to electrically couple a transfer node therein to the plurality of tri-state latches, and a node connection circuit configured to electrically connect the transfer node to the sensing node. In addition, the transfer node circuit and the node connection circuit are collectively configured to simultaneously reflect data stored in at least two of the plurality of tri-state latches to the sensing node, in response to a dump sequence operation.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Byeon, Daeseok Suwon-si, KR 93 299
Cho, Yongsung Suwon-si, KR 37 67
Heo, Minjeong Suwon-si, KR 2 0
Shin, Jaehue Suwon-si, KR 4 0

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