METHOD FOR EFFICIENTLY WAKING UP FERROELECTRIC MEMORY
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United States of America
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Issued Date -
Oct 31, 2024
app pub date -
Jul 9, 2024
filing date -
Jul 9, 2024
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Abstract
A method for efficiently waking up ferroelectric memory is provided. A wafer is formed with a plurality of first signal lines, a plurality of second signal lines, a plurality of third signal lines, and a plurality of ferroelectric memory cells that constitute a ferroelectric memory array. Each of the ferroelectric memory cells is electrically connected to one of the first signal lines, one of the second signal lines and one of the third signal lines. Voltage signals are simultaneously applied to the first signal lines, the second signal lines and the third signal lines to induce occurrence of a wake-up effect in the ferroelectric memory cells.
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