METHOD FOR MANUFACTURING ETCHING MASK PATTERN, AND RESIN COMPOSITION FOR FORMING ETCHING MASK PATTERN
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United States of America
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Issued Date -
Oct 31, 2024
app pub date -
Apr 24, 2024
filing date -
Apr 24, 2024
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Abstract
A manufacturing method including applying a resin composition for forming an etching mask pattern onto a support to form a layer containing a block copolymer and having a film thickness of 25 nm or more, and phase-separating the layer. The resin composition contains a block copolymer having a first block and a second block, the first block is includes a constitutional unit having General Formula (b1), and the second block is a random copolymer of a constitutional unit of General Formula (b2m) and a constitutional unit of General Formula (b2g). In the formulas illustrated below, R1 is an alkyl group which may have an oxygen atom or a silicon atom; R2 is an alkyl group; R3 is an alkylene group; and x represents a molar ratio and is more than 0 and 0.10 or less
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