PROCESS METHOD FOR IMPROVING SRAM OPERATING SPEED
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 24, 2024
app pub date -
Mar 28, 2024
filing date -
Mar 28, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A method making a SRAM includes forming a low voltage region, a medium voltage region, and a high voltage region in an active region; forming a low voltage PMOS active region and a low voltage NMOS active region in the low voltage region; forming an STI region between the low voltage PMOS active region and the low voltage NMOS active region; covering the SRAM structure with an oxide layer and an HTO film layer; forming a hard mask on the HTO film layer; performing photolithography to expose the hard mask on the active low voltage region; removing the exposed hard mask from the active low voltage region and removing the HTO film layer and the oxide layer below the hard mask.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully