HYBRID MOLYBDENUM FILL SCHEME FOR LOW RESISTIVITY SEMICONDUCTOR APPLICATIONS
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United States of America Patent
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Issued Date -
Oct 24, 2024
app pub date -
Apr 20, 2023
filing date -
Apr 20, 2023
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Abstract
Semiconductor devices and methods for molybdenum fill in semiconductor devices are provided. In one aspect, a method for processing a semiconductor device substrate is provided. The method includes exposing at least one feature formed in a dielectric layer to a grain modification layer deposition process to deposit a grain modification layer over at least a portion of the at least one feature. The at least one feature is defined by sidewall surfaces formed in the dielectric layer and a bottom surface extending between the sidewall surfaces. The method further includes exposing the at least one feature to a molybdenum deposition process to form a molybdenum-fill layer on the grain modification layer, wherein the grain modification layer comprises a metal different from molybdenum.
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