ATOMIC LAYER DEPOSITING APPARATUS AND ATOMIC LAYER DEPOSITING METHOD USING THE SAME
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United States of America Patent
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Issued Date -
Oct 24, 2024
app pub date -
Jun 27, 2024
filing date -
Jun 27, 2024
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Abstract
An atomic layer depositing apparatus includes: a gas supply assembly configured to supply a source gas, a reaction gas, and a purge gas; and a substrate transfer module disposed on a lower side of the gas supply assembly, configured to move linearly, and having an upper side on which the substrate is seated. The gas supply assembly includes: a purge gas supply module connected to a purge gas supply line in which the purge gas flows, a reaction gas supply module connected to a reaction gas supply line in which the reaction gas flows, a source gas supply module configured to selectively communicate with any one of the purge gas supply line and a source gas supply line in which the source gas flows, a pumping module disposed among the purge gas supply module, the reaction gas supply module, and the source gas supply module.
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