SEMICONDUCTOR LAYER INCLUDING Sn BASED PEROVSKITE INCLUDING CHLORIDE-BASED COMPOUND AND IODIDE-BASED COMPOUND, THIN FILM TRANSISTOR INCLUDING SAME, AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Oct 24, 2024
app pub date -
Feb 26, 2024
filing date -
Feb 26, 2024
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Proposed are a semiconductor layer including Sn-based perovskite including a chloride-based compound and an iodine-based compound, a thin film transistor including the same, and a manufacturing method thereof. The semiconductor layer includes a perovskite complex, where the perovskite complex includes a Sn-based perovskite and an additive including at least one selected from the group consisting of a first additive and a second additive, the first additive includes at least one selected from the group consisting of a chloride-based compound and an acetate-based compound, and the second additive includes an iodide-based compound (iodide). Thus, a transistor, an environmentally friendly material free of Pb, having high charge mobility and being easily industrialized, can be provided.
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