ACOUSTIC INDUCTION-TYPE SEMICONDUCTOR ELEMENT AND ACOUSTIC ELEMENT INTEGRATED CIRCUIT
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United States of America Patent
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Issued Date -
Oct 17, 2024
app pub date -
Apr 22, 2024
filing date -
Apr 22, 2024
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Abstract
To provide an AI semiconductor element, which has a high sensitivity for smaller element size, and an AEIC. AI semiconductor element encompasses a p-type channel-generation region (14); n-type first and second main electrode regions (15b, 15a) buried in the channel-generation region (14); gate insulating films (12, 16) disposed on the channel-generation region (14) sandwiched by the first and second main electrode regions; a main floating electrode (17c) in a floating state, provided on the gate insulating films; fixed-potential electrodes (17o) located adjacently to the main floating electrode (17c), being set to a first potential; a vibration membrane (23) opposed to the first and fixed-potential electrodes via a vibration cavity; and a vibration electrode (25c) in contact with the upper surface of the vibration membrane (23), is opposed to the fixed-potential electrodes via the vibration cavity, being set to a second potential.
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