Defect-driven Ion Storage on Hexagonal Boron Nitride Anodes for High-Performance and Fire-Safe Lithium Ion Batteries
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 17, 2024
app pub date -
Apr 3, 2024
filing date -
Apr 3, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Embodiments can relate to a method for defect engineering boron nitride (BN). The method can involve forming reactive BN (RBN) by breaking B—N bonds, and activation of the RBN. Forming RBN can involve cryo-milling, ball-milling, sonication, focused ion/electron beam irradiation, detonation, chemical treatment, and/or thermal treatment in limited oxygen. Activation of the RBN can involve chemical activation and/or electrochemical activation. The defect engineered BN can be used to form or be a component of an anode electrode. The anode electrode can include an electrically conductive member including a microstructure layer. The microstructure layer can be made of BN having a surface defect configured to provide a diffusion independent pseudocapacitive ion storage mechanism.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully